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2026-09-01 12:34:50 pm | Source: Accord Fintech
IZMO touches roof as its arm develops indigenous 40 GHz RF Semiconductor Package
IZMO touches roof as its arm develops indigenous 40 GHz RF Semiconductor Package

IZMO is currently locked at its upper circuit limit of Rs. 916.75, up by 83.30 points or 9.99% from its previous closing of Rs. 833.45 on the BSE.

The scrip opened at Rs. 839.00 and has touched a high and low of Rs. 916.75 and Rs. 821.00 respectively. So far 25801 shares were traded on the counter.

The BSE group 'B' stock of face value Rs. 10 has touched a 52 week high of Rs. 1380.00 on 29-Sep-2025 and a 52 week low of Rs. 565.10 on 01-Feb-2026.

Last one week high and low of the scrip stood at Rs. 916.75 and Rs. 821.00 respectively. The current market cap of the company is Rs. 1373.32 crore.

The promoters holding in the company stood at 34.79%, while Institutions and Non-Institutions held 3.87% and 61.34% respectively.

IZMO’s semiconductor subsidiary -- izmo Microsystems has developed an innovative high frequency RF Quad Flat No-Lead (QFN) package for semiconductor devices operating at frequencies of up to 40 GHz. The package has been designed, developed and manufactured entirely in India for a customer developing high frequency RF modules for defence and secure wireless communication applications. Following successful assembly and electrical validation, izmo Microsystems has commenced production shipments, with manufacturing processes established to support scale up. The development strengthens izmo Microsystems’ capabilities in advanced RF and microwave semiconductor packaging and demonstrates its ability to develop application specific packaging solutions and manufacture them at scale.

At higher microwave frequencies, conventional molded and open cavity QFN packages can face significant performance limitations as package parasitics increasingly affect device performance. izmo Microsystems developed a proprietary package architecture with optimized trace geometry and die positioning that achieves wire bond lengths of approximately 0.3 mm, combined with a precision air cavity surrounding the die. The resulting architecture minimizes parasitic effects and enables reliable operation at frequencies of up to 40 GHz. The capability has applications across radar, electronic warfare, secure communications, aerospace, satellite communications and advanced wireless systems, where high frequency semiconductor devices are increasingly important.

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